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Until the 1960s, germanium was used in the layers. Invented by the physicist William Shockley in 1947, the BJT has gone through a number of iterations over the years. The electrons then move from the emitter to the collector this movement creates a higher current flow between the two n-type layers. In an NPN sandwich, electrons are attracted to the base from the emitter. Here, one of the n-type layers (the emitter) is negatively charged, while the other (the collector) is positively charged. In an NPN sandwich, amplification occurs when a small positive current is attached to the p-type layer (the base). When electrical contacts are placed on all three silicon layers and the current is switched on, the electrons in the current will flow between the n-type and p-type silicon layers. The former switches on when the current flows through the base, while the latter switches on only when there’s no current in the base. There are two types of sandwiches: NPN (negative-positive-negative) and PNP (positive-negative-positive). This push-and-pull effect between the layers enables the electrical current to be amplified and controlled.
The n-type layers, on the other hand, should encourage electrons to flow out of the transistor. It's the p-type layers in a BJT's job to attract the electrons that enter the transistor through its input circuit. Moreover, impurities are commonly added to the silicon via doping to make the layers behave as desired. Bipolar junction transistors usually contain silicon.
The name "bipolar" comes from the fact that this type of transistor contains two types of semiconductor material - one positive type (p-type) and one negative type (n-type) - through which a current flows. Simply put, a BJT is a three-terminal semiconductor device. What is a bipolar junction transistor (BJT)? In this article, we'll go through the basics of this type of transistor. A bipolar junction transistor, also called bipolar transistor, is a three-terminal device that can function as electronic switch or signal amplifier.
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